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MT4HTF6464HY-667E1

DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray


  • Manufacturer: Micron Technology Inc.
  • Nocochips NO: 533-MT4HTF6464HY-667E1
  • Package: 200-SODIMM
  • Datasheet: -
  • Stock: 285
  • Description: DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray(Kg)

Details

Tags

Parameters
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form NO LEAD
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Reach Compliance Code unknown
Qualification Status Not Qualified
Operating Supply Voltage 1.8V
Number of Elements 4
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 512MB
Speed 667MT/s
Memory Type DDR2 SDRAM
Clock Frequency 333MHz
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.028A
Max Frequency 667MHz
I/O Type COMMON
Refresh Cycles 8192
RoHS Status ROHS3 Compliant
See Relate Datesheet

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