Parameters | |
---|---|
Technology | CMOS |
Terminal Position | ZIG-ZAG |
Peak Reflow Temperature (Cel) | 260 |
Number of Functions | 1 |
Supply Voltage | 2.5V |
Terminal Pitch | 0.6mm |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 200 |
Operating Supply Voltage | 2.5V |
Number of Elements | 4 |
Temperature Grade | COMMERCIAL |
Max Supply Voltage | 2.7V |
Min Supply Voltage | 2.3V |
Memory Size | 256MB |
Number of Ports | 1 |
Speed | 333MT/s |
Memory Type | DDR SDRAM |
Clock Frequency | 167MHz |
Supply Current-Max | 1.62mA |
Access Time | 900 ns |
Output Characteristics | 3-STATE |
Memory Width | 64 |
Max Frequency | 333MHz |
I/O Type | COMMON |
Refresh Cycles | 8192 |
Height | 31.8mm |
Length | 67.6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Socket |
Package / Case | 200-SODIMM |
Number of Pins | 200 |
Packaging | Bulk |
Published | 2003 |
JESD-609 Code | e4 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 200 |
ECCN Code | EAR99 |
Terminal Finish | Gold (Au) |
Max Operating Temperature | 70°C |
Min Operating Temperature | 0°C |
Additional Feature | AUTO/SELF REFRESH; WD-MAX |
Subcategory | DRAMs |