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MT8HTF12864HY-53EA3

DRAM Module DDR2 SDRAM 1GByte 200SODIMM Tray


  • Manufacturer: Micron Technology Inc.
  • Nocochips NO: 533-MT8HTF12864HY-53EA3
  • Package: 200-SODIMM
  • Datasheet: PDF
  • Stock: 681
  • Description: DRAM Module DDR2 SDRAM 1GByte 200SODIMM Tray(Kg)

Details

Tags

Parameters
Speed 533MT/s
Memory Type DDR2 SDRAM
Clock Frequency 267MHz
Supply Current-Max 2.32mA
Data Bus Width 64b
Organization 128MX64
Output Characteristics 3-STATE
Memory Width 64
Memory Density 8589934592 bit
Max Frequency 533MHz
Access Time (Max) 0.5 ns
I/O Type COMMON
Refresh Cycles 8192
Height 30mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Package / Case 200-SODIMM
Surface Mount NO
Number of Pins 200
Packaging Bulk
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
Terminal Finish MATTE TIN
Max Operating Temperature 85°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Time@Peak Reflow Temperature-Max (s) 30
Operating Supply Voltage 1.8V
Temperature Grade COMMERCIAL
Memory Size 1GB
See Relate Datesheet

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