MT8KTF51264HZ-1G6E1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Socket |
| Package / Case | 204-SODIMM |
| Number of Pins | 204 |
| Published | 2014 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 204 |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Supply Voltage | 1.35V |
| Terminal Pitch | 0.6mm |
| Operating Supply Voltage | 1.35V |
| Number of Elements | 8 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 1.45V |
| Min Supply Voltage | 1.283V |
| Memory Size | 4GB |
| Speed | 1600MT/s |
| Memory Type | DDR3L SDRAM |
| Supply Current-Max | 1.76mA |
| Data Bus Width | 64b |
| Organization | 512MX64 |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
| Standby Current-Max | 0.144A |
| Max Frequency | 1.6GHz |
| I/O Type | COMMON |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
