MT8VDDT6464HY-335F3
| Parameters | |
|---|---|
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Published | 2003 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 200 |
| ECCN Code | EAR99 |
| Terminal Finish | GOLD |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Additional Feature | AUTO/SELF REFRESH; WD-MAX |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 2.5V |
| Terminal Pitch | 0.6mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 200 |
| Operating Supply Voltage | 2.5V |
| Number of Elements | 8 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 2.7V |
| Min Supply Voltage | 2.3V |
| Memory Size | 512MB |
| Number of Ports | 1 |
| Speed | 333MT/s |
| Memory Type | DDR SDRAM |
| Clock Frequency | 167MHz |
| Supply Current-Max | 3.24mA |
| Output Characteristics | 3-STATE |
| Memory Width | 8 |
| Standby Current-Max | 0.04A |
| Max Frequency | 333MHz |
| Access Time (Max) | 0.7 ns |
| I/O Type | COMMON |
| Access Mode | SINGLE BANK PAGE BURST |
| Height Seated (Max) | 31.9mm |
| Length | 67.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
