MT8VDDT6464HY-335J1
| Parameters | |
|---|---|
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Published | 2003 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 200 |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Supply Voltage | 2.5V |
| Terminal Pitch | 0.6mm |
| Operating Supply Voltage | 2.5V |
| Number of Elements | 8 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 2.7V |
| Min Supply Voltage | 2.3V |
| Memory Size | 512MB |
| Speed | 333MT/s |
| Memory Type | DDR SDRAM |
| Clock Frequency | 167MHz |
| Supply Current-Max | 3.24mA |
| Data Bus Width | 64b |
| Organization | 64MX64 |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
| Standby Current-Max | 0.04A |
| Memory Density | 4294967296 bit |
| Max Frequency | 333MHz |
| Access Time (Max) | 0.7 ns |
| I/O Type | COMMON |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
