Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 3 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn80Pb20) |
Additional Feature | AVALANCHE RATED |
HTS Code | 8541.29.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 2.1W Ta 40W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Case Connection | DRAIN |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 450m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 26ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 19 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 5A |
Gate to Source Voltage (Vgs) | 15V |
Drain Current-Max (Abs) (ID) | 5A |
Drain-source On Resistance-Max | 0.45Ohm |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 18A |
Avalanche Energy Rating (Eas) | 125 mJ |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |