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MTD5P06VT4G

MTD5P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MTD5P06VT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 972
  • Description: MTD5P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage -60V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 340MOhm
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.1W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 60V
See Relate Datesheet

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