MTM861270LBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e6 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 120mOhm |
| Terminal Finish | TIN BISMUTH |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 540mW Ta |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 540mW |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 1A, 4V |
| Vgs(th) (Max) @ Id | 1.1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4V |
| Vgs (Max) | ±10V |
| Turn-Off Delay Time | 57 ns |
| Continuous Drain Current (ID) | -2A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 2A |
| DS Breakdown Voltage-Min | 20V |
| Nominal Vgs | -750 mV |
| Height | 530μm |
| Length | 1.6mm |
| Width | 1.4mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
