Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Vgs (Max) | ±15V |
Fall Time (Typ) | 90 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 12A |
Threshold Voltage | 1V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 15V |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 42A |
Avalanche Energy Rating (Eas) | 72 mJ |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 15 V |
Height | 20.4mm |
Length | 10.67mm |
Width | 4.83mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~175°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 180mOhm |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Powers |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 12A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 48W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 48W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 6A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
Rise Time | 190ns |