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MUBW15-06A6K

IGBT MODULE 600V 19A 75W E1


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW15-06A6K
  • Package: E1
  • Datasheet: PDF
  • Stock: 556
  • Description: IGBT MODULE 600V 19A 75W E1 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 75W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 75W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 19A
Current - Collector Cutoff (Max) 600μA
Collector Emitter Breakdown Voltage 600V
Reverse Voltage 1.6kV
Input Capacitance 600pF
Turn On Time 30 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 15A
Turn Off Time-Nom (toff) 200 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 0.6nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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