Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, PCB, Screw |
Mounting Type | Chassis Mount |
Package / Case | E1 |
Number of Pins | 25 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~125°C TJ |
Packaging | Bulk |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 25 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 90W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | MUBW |
Pin Count | 25 |
Qualification Status | Not Qualified |
Number of Elements | 7 |
Configuration | Three Phase Inverter with Brake |
Output Current | 89A |
Case Connection | ISOLATED |
Power - Max | 90W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Three Phase Bridge Rectifier |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 19A |
Current - Collector Cutoff (Max) | 600μA |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Reverse Voltage | 1.6kV |
Input Capacitance | 600pF |
Turn On Time | 90 ns |
Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
Turn Off Time-Nom (toff) | 350 ns |
IGBT Type | NPT |
NTC Thermistor | Yes |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 0.6nF @ 25V |
VCEsat-Max | 3.4 V |
Height | 17.1mm |
Length | 82mm |
Width | 37.4mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |