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MUBW15-12A7

IGBT MODULE 1200V 35A 180W E2


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW15-12A7
  • Package: E2
  • Datasheet: PDF
  • Stock: 660
  • Description: IGBT MODULE 1200V 35A 180W E2 (Kg)

Details

Tags

Parameters
Voltage - Collector Emitter Breakdown (Max) 1200V
Reverse Voltage 1.6kV
Input Capacitance 1nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Max Power Dissipation 180W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 180W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 35A
Current - Collector Cutoff (Max) 900μA
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet

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