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MUBW20-06A6

IGBT MODULE 600V 23A 68W E1


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW20-06A6
  • Package: E1
  • Datasheet: PDF
  • Stock: 220
  • Description: IGBT MODULE 600V 23A 68W E1 (Kg)

Details

Tags

Parameters
Max Power Dissipation 68W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 68W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 23A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 800pF
Turn On Time 80 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Turn Off Time-Nom (toff) 325 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 0.8nF @ 25V
RoHS Status RoHS Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature FAST
Subcategory Insulated Gate BIP Transistors
See Relate Datesheet

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