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MUBW75-06A8

IGBT MODULE 600V 100A 320W E3


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW75-06A8
  • Package: E3
  • Datasheet: PDF
  • Stock: 153
  • Description: IGBT MODULE 600V 100A 320W E3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 320W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 24
JESD-30 Code R-XUFM-X24
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Turn On Delay Time 150 ns
Power - Max 320W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Turn-Off Delay Time 450 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1.4mA
Collector Emitter Breakdown Voltage 600V
Reverse Voltage 1.6kV
Input Capacitance 4.2nF
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 75A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.2nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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