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MUBW75-12T8

IGBT MODULE 1200V 110A 355W E3


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW75-12T8
  • Package: E3
  • Datasheet: PDF
  • Stock: 985
  • Description: IGBT MODULE 1200V 110A 355W E3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW SATURATION VOLTAGE, LOW SWITCHING LOSS, UL RECOGNIZED
Max Power Dissipation 355W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 24
JESD-30 Code R-XUFM-X24
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 355W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 110A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Reverse Voltage 1.6kV
Input Capacitance 5.35nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 5.35nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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