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MUBW75-17T8

IGBT MODULE 1700V 113A 450W E3


  • Manufacturer: IXYS
  • Nocochips NO: 401-MUBW75-17T8
  • Package: E3
  • Datasheet: PDF
  • Stock: 867
  • Description: IGBT MODULE 1700V 113A 450W E3 (Kg)

Details

Tags

Parameters
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 450W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 24
JESD-30 Code R-XUFM-X24
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 450W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 113A
Current - Collector Cutoff (Max) 800μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Reverse Voltage 2.2kV
Input Capacitance 6.6nF
Turn On Time 360 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
Turn Off Time-Nom (toff) 1350 ns
IGBT Type Trench
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.6nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2009
JESD-609 Code e3
See Relate Datesheet

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