MUN5312DW1T1
| Parameters | |
|---|---|
| Power - Max | 250mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN AND PNP |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 22k Ω |
| Resistor - Emitter Base (R2) | 22k Ω |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 6 |
| Terminal Finish | TIN LEAD |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO 1 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
See Relate Datesheet
