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MUR10010CTR

MUR10010CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MUR10010CTR
  • Package: Twin Tower
  • Datasheet: PDF
  • Stock: 939
  • Description: MUR10010CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 400A
Output Current-Max 50A
Application SUPER FAST RECOVERY
Current - Average Rectified (Io) 100A DC
Max Reverse Voltage (DC) 100V
Average Rectified Current 100A
Number of Phases 1
Reverse Recovery Time 75 ns
Peak Reverse Current 25μA
Non-rep Pk Forward Current-Max 1500A
Reverse Voltage 100V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
See Relate Datesheet

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