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MUR10060CTR

MUR10060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MUR10060CTR
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 484
  • Description: MUR10060CTR datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A
Forward Current 50A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 400A
Application SUPER FAST RECOVERY
Current - Average Rectified (Io) 100A DC
Forward Voltage 1.7V
Max Reverse Voltage (DC) 600V
Average Rectified Current 100A
Number of Phases 1
Reverse Recovery Time 110 ns
Peak Reverse Current 25μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Reverse Voltage 600V
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 400A
REACH SVHC No SVHC
RoHS Status RoHS Compliant
See Relate Datesheet

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