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MUR20020CTR

DIODE MODULE 200V 200A 2TOWER


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MUR20020CTR
  • Package: Twin Tower
  • Datasheet: -
  • Stock: 191
  • Description: DIODE MODULE 200V 200A 2TOWER (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 175°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 100A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Output Current-Max 100A
Application SUPER FAST RECOVERY
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 200V
Average Rectified Current 200A
Number of Phases 1
Reverse Recovery Time 75 ns
Peak Reverse Current 25μA
Reverse Voltage 200V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
See Relate Datesheet

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