Parameters | |
---|---|
Peak Reverse Current | 2μA |
Max Repetitive Reverse Voltage (Vrrm) | 200V |
Capacitance @ Vr, F | 27pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 40A |
Max Forward Surge Current (Ifsm) | 40A |
Recovery Time | 25 ns |
Reverse Voltage (DC) | 200V |
Natural Thermal Resistance | 15 °C/W |
Height | 2.42mm |
Length | 4.57mm |
Width | 3.94mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DO-214AA, SMB |
Number of Pins | 2 |
Weight | 92.986436mg |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Capacitance | 60pF |
Subcategory | Rectifier Diodes |
Voltage - Rated DC | 200V |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 1A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MURS120 |
Pin Count | 2 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 2μA @ 200V |
Output Current | 1A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
Forward Current | 1A |
Operating Temperature - Junction | -55°C~175°C |
Max Surge Current | 40A |
Application | EFFICIENCY |
Forward Voltage | 875mV |
Max Reverse Voltage (DC) | 200V |
Average Rectified Current | 1A |
Number of Phases | 1 |
Reverse Recovery Time | 25 ns |