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MURT20010R

MURT20010R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi


  • Manufacturer: GeneSiC Semiconductor
  • Nocochips NO: 347-MURT20010R
  • Package: Three Tower
  • Datasheet: PDF
  • Stock: 899
  • Description: MURT20010R datasheet pdf and Diodes - Rectifiers - Arrays product details from GeneSiC Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Operating Temperature (Max) 150°C
Operating Temperature (Min) -55°C
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 100A
Case Connection ISOLATED
Max Surge Current 2kA
Output Current-Max 100A
Application SUPER FAST RECOVERY
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 100V
Average Rectified Current 200A
Number of Phases 1
Reverse Recovery Time 75 ns
Peak Reverse Current 25μA
Non-rep Pk Forward Current-Max 2000A
Reverse Voltage 100V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
See Relate Datesheet

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