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MVGSF1N02LT1G

MOSFET


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MVGSF1N02LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 294
  • Description: MOSFET (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 5V
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Rise Time 1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 750mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.75A
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Pin Count 3
Power Dissipation-Max 400mW Ta
Element Configuration Single
Power Dissipation 400mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
See Relate Datesheet

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