Parameters | |
---|---|
HTS Code | 8541.29.00.75 |
Subcategory | FET General Purpose Power |
Terminal Position | QUAD |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 1.96GHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MW6S004 |
JESD-30 Code | R-PQSO-N4 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 50mA |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 18dB |
DS Breakdown Voltage-Min | 68V |
Power - Output | 4W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Package / Case | PLD-1.5 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated | 68V |