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MWI15-12A6K

IGBT MODULE 1200V 19A 90W E1


  • Manufacturer: IXYS
  • Nocochips NO: 401-MWI15-12A6K
  • Package: E1
  • Datasheet: PDF
  • Stock: 225
  • Description: IGBT MODULE 1200V 19A 90W E1 (Kg)

Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 13
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Max Power Dissipation 90W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 24
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 90W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 19A
Current - Collector Cutoff (Max) 900μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 600pF
Turn On Time 90 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A
Turn Off Time-Nom (toff) 350 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 0.6nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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