MWI150-06A8
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | E3 |
| Number of Pins | 19 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 33 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 515W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 170A |
| Base Part Number | MWI |
| Pin Count | 33 |
| JESD-30 Code | R-XUFM-X33 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Rise Time | 30ns |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 170A |
| Current - Collector Cutoff (Max) | 1.5mA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 6.5nF |
| Turn On Time | 155 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 260 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 6.5nF @ 25V |
| VCEsat-Max | 2.5 V |
| Height | 17mm |
| Length | 122mm |
| Width | 62mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
