MWI25-12A7T
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | E2 |
| Number of Pins | 24 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 13 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 225W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MWI |
| Pin Count | 24 |
| JESD-30 Code | R-XUFM-X13 |
| Qualification Status | Not Qualified |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Power - Max | 225W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| Current - Collector Cutoff (Max) | 2mA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Input Capacitance | 1.65nF |
| Turn On Time | 170 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 570 ns |
| IGBT Type | NPT |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 1.65nF @ 25V |
| VCEsat-Max | 2.7 V |
| Height | 17mm |
| Length | 107.5mm |
| Width | 45mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
