MWI50-06A7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | E2 |
| Number of Pins | 18 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 11 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 225W |
| Terminal Position | UPPER |
| Terminal Form | PIN/PEG |
| Base Part Number | MWI |
| Pin Count | 17 |
| JESD-30 Code | R-XUFM-P11 |
| Number of Elements | 6 |
| Configuration | Three Phase Inverter |
| Case Connection | ISOLATED |
| Turn On Delay Time | 50 ns |
| Power - Max | 225W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Turn-Off Delay Time | 300 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 72A |
| Current - Collector Cutoff (Max) | 600μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 2.8nF |
| Turn On Time | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 330 ns |
| IGBT Type | NPT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 2.8nF @ 25V |
| VCEsat-Max | 2.4 V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
