Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | E2 |
Number of Pins | 18 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Bulk |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 11 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 280W |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Base Part Number | MWI |
Pin Count | 17 |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 6 |
Configuration | Three Phase Inverter |
Case Connection | ISOLATED |
Power - Max | 280W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 90A |
Current - Collector Cutoff (Max) | 1.3mA |
Collector Emitter Breakdown Voltage | 600V |
Input Capacitance | 3.2nF |
Turn On Time | 100 ns |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 75A |
Turn Off Time-Nom (toff) | 310 ns |
IGBT Type | NPT |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
Input Capacitance (Cies) @ Vce | 3.2nF @ 25V |
VCEsat-Max | 2.6 V |
Height | 17mm |
Length | 107.5mm |
Width | 45mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |