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MWI75-12T7T

IGBT MODULE 1200V 110A 355W E2


  • Manufacturer: IXYS
  • Nocochips NO: 401-MWI75-12T7T
  • Package: E2
  • Datasheet: PDF
  • Stock: 702
  • Description: IGBT MODULE 1200V 110A 355W E2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 355W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 28
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 355W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 110A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 5.35nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 5.35nF @ 25V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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