Parameters |
Factory Lead Time |
1 Week |
Mounting Type |
Surface Mount |
Package / Case |
8-VFDFN Exposed Pad |
Operating Temperature |
-40°C~100°C TA |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Supply |
4.5V~5.5V |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
16ns 11ns |
Channel Type |
Synchronous |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Logic Voltage - VIL, VIH |
0.7V 3.4V |
High Side Voltage - Max (Bootstrap) |
35V |
RoHS Status |
ROHS3 Compliant |
NCP81253BMNTBG Overview
A higher degree of flexibility is achieved by adopting its 8-VFDFN Exposed Pad package.The packaging method is indicated by Tape & Reel (TR).Gate drivers is configured wGate driversh 2 drivers.Surface Mount is mounted in the way.By using 4.5V~5.5V supply voltage, it is able to demonstrate its superiority.There is a gate type of N-Channel MOSFET in this design.-40°C~100°C TA is the allowed temperature range for this device.A type of Non-Inverting is used for input in this program.Ideally, the high-side voltage should not exceed 35V.
NCP81253BMNTBG Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 35V
NCP81253BMNTBG Applications
There are a lot of ON Semiconductor NCP81253BMNTBG gate drivers applications.
- High power buffers
- DC/DC converters
- Motor Control
- Industrial Motor Inverter - Power Tools, Robotics
- High current laser/LED systems
- Smart Phones
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Power factor correction (PFC) circuits
- Dual-Battery Systems
- Refrigerator