NCV8440ASTT3G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.69W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 1.9V @ 100μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 35V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 59V |
| Drive Voltage (Max Rds On,Min Rds On) | 3.5V 10V |
| Vgs (Max) | ±15V |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 15V |
| Drain-source On Resistance-Max | 0.11Ohm |
| Pulsed Drain Current-Max (IDM) | 10A |
| DS Breakdown Voltage-Min | 52V |
| Avalanche Energy Rating (Eas) | 110 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
