Parameters | |
---|---|
Terminal Form | GULL WING |
Current Rating | 26A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Voltage | 60V |
Power Dissipation-Max | 68W Tc |
Element Configuration | Single |
Current | 26A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 68W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 35m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 26A Tc |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Rise Time | 200ns |
Mount | Surface Mount |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±16V |
Number of Pins | 3 |
Fall Time (Typ) | 102 ns |
Turn-Off Delay Time | 45 ns |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 26A |
Operating Temperature | -65°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Gate to Source Voltage (Vgs) | 16V |
Pbfree Code | yes |
Drain-source On Resistance-Max | 0.05Ohm |
Part Status | Active |
Drain to Source Breakdown Voltage | 60V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Radiation Hardening | No |
Number of Terminations | 2 |
RoHS Status | ROHS3 Compliant |
ECCN Code | EAR99 |
Lead Free | Lead Free |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |