Parameters | |
---|---|
Turn-Off Delay Time | 8 ns |
Continuous Drain Current (ID) | 510mA |
Threshold Voltage | 2.1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.51A |
Drain to Source Breakdown Voltage | 60V |
Dual Supply Voltage | 60V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 2.1 V |
Min Breakdown Voltage | 60V |
Height | 900μm |
Length | 3mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 2Ohm |
Subcategory | Other Transistors |
Max Power Dissipation | 700mW |
Terminal Form | GULL WING |
Current Rating | 350mA |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 960mW |
Turn On Delay Time | 2.8 ns |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2 Ω @ 510mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 510mA 340mA |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
Rise Time | 10ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 10 ns |