NDD01N60-1G
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 4 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 46W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8.5 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 50μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
| Rise Time | 5.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 21.3 ns |
| Turn-Off Delay Time | 16.5 ns |
| Continuous Drain Current (ID) | 1.5A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 6A |
| Avalanche Energy Rating (Eas) | 13 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
