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NDD03N50Z-1G

MOSFET 500V 2.6A HVFET IPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NDD03N50Z-1G
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 524
  • Description: MOSFET 500V 2.6A HVFET IPAK (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 58W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 58W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 274pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 500V
Height 7.62mm
Length 6.73mm
Width 2.38mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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