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NDD60N900U1T4G

MOSFET N-CH 600V 5.9A DPAK-3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NDD60N900U1T4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 674
  • Description: MOSFET N-CH 600V 5.9A DPAK-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Power Dissipation-Max 74W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 5.7A
Drain Current-Max (Abs) (ID) 5.9A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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