NDDP010N25AZ-1H
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta 52W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 26ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 31 ns |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 4.5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.42Ohm |
| Drain to Source Breakdown Voltage | 250V |
| Height | 7mm |
| Length | 6.5mm |
| Width | 2.3mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
