Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2003 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 27W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3.6 Ω @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 50μA |
Input Capacitance (Ciss) (Max) @ Vds | 372pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.1A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Rise Time | 8ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 3.1A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Pulsed Drain Current-Max (IDM) | 12A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 100 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |