NDF04N60ZH
| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 2Ohm |
| Pulsed Drain Current-Max (IDM) | 20A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 120 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 30W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 9ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 4.8A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
See Relate Datesheet
