NDF11N50ZG
| Parameters | |
|---|---|
| Case Connection | ISOLATED |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 520m Ω @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1645pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
| Rise Time | 32ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 12A |
| Factory Lead Time | 1 Week |
| Threshold Voltage | 3.9V |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| JEDEC-95 Code | TO-220AB |
| Surface Mount | NO |
| Gate to Source Voltage (Vgs) | 30V |
| Number of Pins | 3 |
| Drain Current-Max (Abs) (ID) | 6.7A |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Drain-source On Resistance-Max | 0.52Ohm |
| Packaging | Tube |
| Drain to Source Breakdown Voltage | 500V |
| Published | 2000 |
| Pulsed Drain Current-Max (IDM) | 42A |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Avalanche Energy Rating (Eas) | 420 mJ |
| Part Status | Obsolete |
| Nominal Vgs | 3.9 V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Height | 16.12mm |
| ECCN Code | EAR99 |
| Length | 10.63mm |
| Terminal Finish | Tin (Sn) |
| Width | 4.9mm |
| Subcategory | FET General Purpose Power |
| Radiation Hardening | No |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| RoHS Status | RoHS Compliant |
| Power Dissipation-Max | 39W Tc |
| Lead Free | Lead Free |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 39W |
See Relate Datesheet
