Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 30mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 1997 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 500mOhm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -900mA |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
Turn On Delay Time | 8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 300m Ω @ 1A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 135pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 900mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
Rise Time | 16ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 900mA |
Threshold Voltage | -800mV |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.9A |
Drain to Source Breakdown Voltage | -30V |
Dual Supply Voltage | -30V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | -1.7 V |
Height | 1.22mm |
Width | 3.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |