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NDS355N

MOSFET N-CH 30V 1.6A SSOT3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NDS355N
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 268
  • Description: MOSFET N-CH 30V 1.6A SSOT3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 125mOhm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.6A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 245pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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