NE25139-T1
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Number of Pins | 4 |
| Transistor Element Material | GALLIUM ARSENIDE |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Voltage - Rated | 13V |
| Additional Feature | LOW NOISE |
| Terminal Form | GULL WING |
| Current Rating | 40mA |
| Frequency | 900MHz |
| Base Part Number | NE251 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 125°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | DUAL GATE, DEPLETION MODE |
| Case Connection | SOURCE |
| Current - Test | 10mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | MESFET Dual Gate |
| Continuous Drain Current (ID) | 40A |
| Gain | 20dB |
| DS Breakdown Voltage-Min | 13V |
| FET Technology | METAL SEMICONDUCTOR |
| Noise Figure | 1.1dB |
| Voltage - Test | 5V |
| Feedback Cap-Max (Crss) | 0.03 pF |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
