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NE3509M04-A

RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET


  • Manufacturer: CEL
  • Nocochips NO: 130-NE3509M04-A
  • Package: SOT-343F
  • Datasheet: PDF
  • Stock: 143
  • Description: RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET (Kg)

Details

Tags

Parameters
Mount Surface Mount
Package / Case SOT-343F
Number of Pins 4
Supplier Device Package M04
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated 4V
Current Rating (Amps) 60mA
Frequency 2GHz
Base Part Number NE3509
Power Dissipation 125mW
Current - Test 10mA
Transistor Type HFET
Continuous Drain Current (ID) 60mA
Gate to Source Voltage (Vgs) 3V
Gain 17.5dB
Drain to Source Breakdown Voltage 2V
Power - Output 11dBm
Noise Figure 0.4dB
Voltage - Test 2V
Min Breakdown Voltage 4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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