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NE3511S02-T1C-A

RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET


  • Manufacturer: CEL
  • Nocochips NO: 130-NE3511S02-T1C-A
  • Package: 4-SMD, Flat Leads
  • Datasheet: -
  • Stock: 486
  • Description: RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET (Kg)

Details

Tags

Parameters
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Supplier Device Package S02
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 125°C
Min Operating Temperature -65°C
Voltage - Rated 4V
Current Rating (Amps) 70mA
Max Power Dissipation 165mW
Current Rating 70mA
Frequency 12GHz
Output Power 165mW
Current - Test 10mA
Drain to Source Voltage (Vdss) 4V
Transistor Type HFET
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) -3V
Gain 13.5dB
Noise Figure 0.3dB
Voltage - Test 2V
Min Breakdown Voltage 4V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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