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NE5511279A-T1-A

RF MOSFET Transistors UHF Band RF Power


  • Manufacturer: CEL
  • Nocochips NO: 130-NE5511279A-T1-A
  • Package: 4-SMD, Flat Leads
  • Datasheet: -
  • Stock: 314
  • Description: RF MOSFET Transistors UHF Band RF Power (Kg)

Details

Tags

Parameters
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4
Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Voltage - Rated DC 7.5V
Max Power Dissipation 20W
Terminal Position QUAD
Current Rating 79A
Frequency 900MHz
Base Part Number NE55112
Pin Count 4
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 7.5V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 6V
Gain 15dB
Max Output Power 10W
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 20V
Power - Output 40dBm
FET Technology METAL-OXIDE SEMICONDUCTOR
Min Breakdown Voltage 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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