NE85633-T1B-R24-A
| Parameters | |
|---|---|
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA 10V |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 11.5dB |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Current - Collector (Ic) (Max) | 100mA |
| Frequency - Transition | 7GHz |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 3V |
| Continuous Collector Current | 100mA |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Supplier Device Package | SOT-23 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Frequency | 7GHz |
| Base Part Number | NE85633 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Power - Max | 200mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
See Relate Datesheet
