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NESG2046M33-A

RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr


  • Manufacturer: CEL
  • Nocochips NO: 130-NESG2046M33-A
  • Package: 3-SMD, Flat Lead
  • Datasheet: PDF
  • Stock: 149
  • Description: RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 130mW
Frequency 2GHz
Base Part Number NESG2046
Number of Elements 1
Element Configuration Single
Power Dissipation 130mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 2mA 1V
Collector Emitter Breakdown Voltage 5V
Gain 9.5dB ~ 11.5dB
Frequency - Transition 18GHz
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.5V
hFE Min 140
Continuous Collector Current 40mA
Noise Figure (dB Typ @ f) 0.8dB ~ 1.5dB @ 2GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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